ConsultHTRB burn-in test system(HTRB2020)
The system can perform the high temperature reverse bias burn-in test at room temperature +10 ℃~200 ℃. During the burn-in process, it can monitor the leakage current status and voltage status of the tested component in real time, (record and export the burn-in test data as required).
Function
- NA level leakage current detection accuracy
- 30s full station data refresh of the machine
- Unique high-voltage suppression circuit, instantaneous of components, without affecting burn-in process of other stations
- Customized independent control function of burn-in voltage of the work station to eliminate the burn-in overrun of a single station
- Adequate human safety considerations for experimenters
Product Features
Test temperature zone | 1 |
Test temperature | RT+10~200℃ |
Test zone | 16(16/32/40/48 zone optional) |
Stations per zone | 80 (typical) |
Burn-in voltage | 0~±2000V |
Voltage detection accuracy | ±(1%+2LSB) |
Current detection | 10nA~50mA |
Current detection accuracy | ±(1%+10nA) |
Machine power supply | Three-phase AC380±38V |
Maximum power | 8KW (typical) |
Total weight | 680KG (typical) |
Dimensions of machine | 1400mm(W)×1400mm(D×2000mm(H) |
Applicable standards
GJB128 MIL-STD-750D AQG324
Applicable components
For MOS FET, diode, triode, IGBT module, PIM module, thyristor, etc