Consult

High temperature reverse bias burn-in test system(HTRB2000)

The system can perform the high temperature reverse bias burn-in test at room temperature +10℃~+200℃. During the burn-in process, it can monitor the leakage current state and voltage state of the tested component in real time, record and export the burn-in test data as required.

Function

nA level leakage current detection accuracy
30s full station data refresh of the machine
Unique high-voltage suppression circuit, instantaneous breakdown of components, without affecting burn-in process of other stations
Customized independent control function of burn-in voltage of the work station to eliminate the burn-in overrun of a single station
Customizable positive and negative power supplies to achieve simultaneous application of bias voltage to the upper and lower bridges of the module
Full experimenter human safety considerations are set

Product Features

Test temperature zone	1
Test temperature	RT+10~200℃
Test zone	16(16/32/40/48 zone optional)
Stations per zone	80 (typical)
Burn-in voltage	0~±2000V
Voltage detection accuracy	±(1%+2LSB)
Current detection	10nA~50mA
Current detection accuracy	±(1%+10nA)
Machine power supply	Three-phase AC380±38V
Maximum power	8KW (typical)
Total weight	680Kg (typical)
Dimensions of machine	1400mm(W)×1400mm(D×2000mm(H)

Applicable standards

MIL-STD-750D AQG324

Applicable components

For MOS transistor, diode, triode, IGBT module, PIM module, SCR, etc.