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Dynamic power components burn-in test system(DHTOL2000)

The system can conduct dynamic burn-in and testing for MOSFET devices and the third generation SiC and GaN devices. During the burn-in process, it can monitor the peak current, working voltage and on resistance of the tested devices in real time, (record and export the burn-in test data as required).


  • Aging of high-frequency dynamic burn-in voltage and current
  • 60s full station data refresh of the whole machine
  • Unique protection circuit, unit device breakdown will not affect burn-in process of other stations
  • The independent control function of burn-in voltage in the location can be customized to eliminate burn-in overruns
  • in a single station

Product Features

Test temperature zone


Test temperature


Test zone

32zone(6/32 zoneoptional)

Stations per zone


Burn-in voltage

0~650V, accuracy:±(2%+0.1V)

Current detection

0~1A, accuracy:±(2%+0.05A)

Pulse frequency


Duty cycle


On-resistance Rds(on)

30mR~5R,  accuracy:10%

Machine power supply

Three-phase AC380±38V

Maximum power


Total weight


Dimensions of machine


Applicable standards

GJB128 MIL-STD-750D AEC-Q101 AQG324 JESD22

Applicable components

For various large, medium and small power MOSFET components and third-generation SiC and GaN components