Consult

High temperature gate-bias burn-in test system(HTGB2000)

The system can perform the high temperature gate bias burn-in test at room temperature +10℃~200℃. During theaging process, it canmonitor the leakage current status and voltage status of the tested component in real time, record the Burn-in tese alata as required, and export the tese report.

Function

nA level for leakage current defection accuracy
30s full station data refresh of the machine
Customizable indepondent control function of burn-in voltage of work station to realize single work station burn-in over limit rejection
Adequate human safety considerations for operators

Product Features

Test temperature zone	1
Test temperature	RT +10~200℃
Test zone	16(16/32/40/48 optional)
Stations per zone	80(typical)
Bum-in voltage range	0~±100V
Voltage delection accuracy	±(1%+2LSB)
Current detection range	1nA~1mA
Current detection accuracy	±(1%+1nA)
Machine power supply	Three-phase AC380±38V
Maximum power	8KW(typical)
Total weight	680KG(typical)
Dimensions of machine	1450mm(W)×1450mm(D)×2000mm(H)

Applicable standards

JESD22-A101 AQG324 GJB128MIL-STD-750D

Applicable components

For MOS, Diode, triode, IGBT Modules, PIM Modules, thyristor, etc.