Consult

High temperature gate bias burn-in test system(HTGB2000)

The system can perform high-temperature gate bias burn-in tests at room temperature +10℃~+200℃.During the burn-in process, the leakage current state and voltage state of the tested device are monitored in real-time, and burn-in test data is recorded as needed, and test reports are exported.

Function

nA level leakage current detection accuracy
Full station data refresh for 30 seconds of the entire machine
Customizable station burn-in voltage independent control function, achieving single station burn-in exceeding limit elimination
Customizable positive and negative power supplies to achieve simultaneous application of bias voltage to the upper and lower bridges of the module
Full experimenter human safety considerations are set

Product Features

Test temperature zone	1
Test temperature	RT +10~+200℃
Burn-in test zone	16(16/32/40/48 optional)
Stations per zone	80(typical)
Bum-in voltage range	0~±100V
Voltage delection accuracy	±(1%+2LSB)
Current detection range	1nA~1mA
Current detection accuracy	±(1%+1nA)
Machine power supply	Three-phase AC380±38V
Maximum power	8KW(typical)
Total weight	680Kg(typical)
Dimensions of machine	1450mm(W)×1450mm(D)×2000mm(H)

Applicable standards

JESD22-A101 AQG324 GJB128 MIL-STD-750D

Applicable components

For MOS transistor, diode, triode, IGBT module, PIM module, SCR, etc.