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High temperature anti bias burn-in system(HTRB3100)

The system can perform high-temperature reverse bias burn-in testing at room temperature +10℃~200℃, and monitor the leakage of the tested device in real-time during the burn-inprocess Current state, voltage state of the tested device, and record burn-in test data as needed, and export test reports.

  • Using a hot platform heating method to heat the device
  • Each device can realize an independent heating platform and independent temperature control
  • Good heat transfer characteristics, aiming at the high temperature and high leakage characteristics of IGBT modules/discrete devices, it can achieve stable HTRB test at 175Tj
  • The independent protection function can be customized to realize the single-station overrun cut-off
  • Full experimenter human safety considerations are set
Product Features

Test thermal platform


Test temperature 

RT +10℃~200℃

Burn-in test zone


Voltage detection range


Voltage detection accuracy


Current detection range


Current detection accuracy


Machine power supply

Three-phase AC380V±38V

Maximum power24KW (typical)

Total weight

1600KG (typical)

Dimensions of machine

Left chamber: 

1500mm(W) x 1400mm(D) x 1980mm(H)

Right chamber: 

1500mm(W) x 1400mm(D) x 1980mm(H)

Control cabinets: 

600mm(W) x 1400mm(D) x 1980mm(H)

Applicable standards


Applicable components

For MOS transistors, diodes, triode, IGBT modules, PIM modules, SCR, etc.