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High-power transistors burn-in test system(MFS2002)

This system is suitable for high power burn-in screening test of various NPN, PNP transistors (including triode and Darlington tube) and MOSFET; suitable for F-1, F-2 (compatible with thick and thin feet), TO-3P and TO-220 packaging.

Function

The system provides 4 test areas, each area provides 16 burn-in stations
Each area with a set of water cooling platform
The component is controlled by touch screen

Product Features

Test zone	4
Test capability	For test conditions below 75W, the overall test capacity is 64 bits For test conditions below 150W, the overall test capacity is 32 bits For test conditions below 300W, the overall test capacity is 16 bits
Cooling system	Cooling power ≥ 4KW, flow rate of each zone 16-160L/h
Test parameters	Test current value of each test component can be tested and controlled, range: 0~5A/10A Test current value of each test component can be tested and controlled,range: 0~60V The temperature of each partition can be independently detected, and the temperature detection range: 10~90℃，temperature detection accuracy: ±(1%+2LSB)
Machine power supply	Three-phase AC380V±38V
Maximum power	10KW(typical)
Total weight	800KG(typical)
Dimensions of machine	1300mm(W)×950mm(D)×2000mm(H)

Applicable standards

GJB128 GJB33 MIL-STD-750

Applicable components

For F0, F1, F2 (fine), F2-3 (coarse), TO-3P and other packages of transistors, triodes, MOS FET