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HTRB burn-in test system(HTRB2040)

The system can perform the high temperature reverse bias burn-in test at room temperature +10 ℃~200 ℃. During the burn-in process, it can monitor the leakage current status and voltage status of the tested component in real time, (record and export the burn-in test data as required).

  • NA level leakage current detection accuracy
  • 30s full station data refresh of the machine
  • Unique high-voltage suppression circuit, instantaneous of components, without affecting burn-in process of other stations
  • Customized independent control function of burn-in voltage of the work station to eliminate the burn-in overrun of a single station
  • Adequate human safety considerations for experimenters
Product Features

Test temperature zone


Test temperature


Test zone

16(16/32/40/48 zone optional)

Stations per zone

80 (typical)

Burn-in voltage


Voltage detection accuracy


Current detection


Current detection accuracy


Machine power  supply

Three-phase  AC380±38V

Maximum    power

8KW (typical)

Total weight

680KG (typical)

Dimensions of machine


Applicable standards

GJB128 MIL-STD-750D AQG324

Applicable components

For MOS FET, diode, triode, IGBT module, PIM module, thyristor, etc