Consult

Dynamic high temperature high humidity reverse bias burn-in test system(DH3TRB2000)

The system performs dynamic high temperature and humidity reverse bias burn-in test for SiC MOSFET with reference to AQG324 for the test method. Up to 8 stations can be tested ineach test area, with independent pulse source configurations. A standard 85°C/85%RH test environment is available for the device. It has the function of short-circuit disengage menttest of test device, which can automatically detach the faulty device from the burn-in test circuit without affecting the normal test of other devices.

Function

nA-level leakage current detection accuracy
The whole machine is refreshed in 30s for full-station data
Unique high-voltage suppression circuit, the instantaneous breakdown of the device does not affect the burn-in process of other stations
The independent control function of the burn-in voltage of the station can be customized to realize the over-limit rejection of theburn-in of a single station
Full experimenter human safety considerations are set

Product Features

Test temperature	RT +10℃~125℃
Test humidity	10%RH-98%RH
Test Method	VGs,off = VGS,min and VGS on = VGS,max
Burn-in test zone	16
Stations per zone	8 (typical)
Voltage detection range	50V~1200V
Voltage detection accuracy	Detection deviation; ±(1%+2LSB)
Pulse control	1.Pulse frequency (square wave): 10kHz~50kHz; Accuracy: 2%±2LSB 2.Square wave duty cycle 20%~80% Accuracy:±2% 3.Voltage rise rate (Dv/Dt) ≥30V/ns 4.Voltage overshoot<15%
VGS voltage test & control range	Customized according to the device VGS accuracy: 1%±0.2V VGS overshoot: ≤10%
Leakage current detection	Detection range: 100nA~30mA. Accuracy: Option1: 0.1uA~1mA resolution 0.1uA Leakage current detection deviation: 1%±2LSB Option2: 1mA~30mA resolution 1uA Leakage current detection deviation: 1%±2LSB
Machine power supply	Three-phase AC380±38V
Total weight	1200KG (typical)
Dimensions of machine	1650mm(W)x1750mm(D)x1950mm(H)

Applicable standards

AEC-Q102 AQG324 JESD22-A101

Applicable components

For MOS transistors, diodes, triode, IGBT modules, PIM modules, SiC, GaN, SCR, etc.