Consult

Dynamic high temperature high humidity reverse bias burn-in test system(DH3TRB2000)

The system performs dynamic high temperature and humidity reverse bias burn-in test for SiC MOSFET with reference to AQG324 for the test method. Up to 6 stations can be tested in each test area, with independent pulse source configurations. A standard 85°C/85%RH test environment is available for the device. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test circuit without affecting the normal test of other devices.

Function

nA-level leakage current detection accuracy
dv/dt>30v/ns (Coss<300pF)
The whole machine is refreshed in 30s for full-station data
Unique high-voltage suppression circuit, the instantaneous breakdown of the device does not affect the burn-in process of other stations
The independent control function of the burn-in voltage of the station can be customized to realize the over-limit rejection of the burn-in of a single station
Full experimenter human safety considerations are set

Product Features

Test temperature	RT +10℃~+150℃
Test humidity	10%RH~98%RH
Test Method	VGS,off = VGS,min and VGS,on = VGS,max
Burn-in test zone	14 (14/16 zone Optional)
Stations per zone	6 (typical)
Voltage detection range	50V~1200V
Voltage detection accuracy	Detection deviation; ±(2%+1V)
Pulse control	1. Pulse frequency (square wave): 10kHz~50kHz; Accuracy: 2%±2LSB 2. Square wave duty cycle 20%~80% Accuracy: ±2% 3. Voltage rise rate (dv/dt) ≥30V/ns (Coss<300pF) 4. Voltage overshoot depends on the amplitude of the pulse voltage, the maximum does not exceed 0.95VDS
VGS voltage test & control range	Passive: -0.7V~ -20V/0V Active: Customized according to the device: VGS voltage: Positive voltage18V, 20V, 22V, 3 options: Negative voltage -3V, -5V, 2 options
Leakage current detection	Detection range: 0.1uA~20mA Accuracy: Option1: 0.1uA~0.999uA resolution 0.01uA accuracy: 1%±0.02uA Option2: 1.00uA~99.9uA resolution 0.1uA accuracy: 1%±0.2uA Option3: 100uA~999uA resolution 1uA accuracy: 1%±2uA Option4: 1.0mA~20.00mA resolution 0.1mA accuracy: 1%±0.2mA
Machine power supply	Three-phase AC380±38V
Total weight	1200Kg (typical)
Dimensions of machine	2000mm(W)×1505mm(D)×1950mm(H)

Applicable standards

AEC-Q101 AQG324 JESD22-A108 JEDEC JEP183A

Applicable components

For SiC, GaN, IGBT module, MOS transistor