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High temperature reverse bias burn-in test system(HTRB4000)

The system can carry out high-temperature reverse bias burn-in test at room temperature+10°C~200°C, and monitor the leakage current state and voltage state of the device undertest in real time during the burn-in process, and record the burn-in test data as needed,and export the test report.

  • The device is heated using a thermal platform heating method
  • Each device can realize an independent heating platform and independent temperature control
  • Good heat transfer characteristics, aiming at the high temperature and high leakage current characteristics of IGB Tmodules/discrete devices, it can achieve stable HTRB test at 175Tj
  • The independent protection function can be customized to realize the single-station overrun cut-off
  • The automatic loading platform, program gating, can be fully automated with the ground rail
  • The test cabinet can be added or reduced according to the demand
  • Full experimenter human safety considerations are set

Product Features

Test thermal platform


Test temperature

RT +10℃~200℃

Burn-in test zone


Voltage detection range


Voltage detection accuracy


Current detection range


Current detection accuracy


Machine power supply

Three-phase AC380V±38V

Maximum power32KW (typical)

Total weight

6000KG (typical)

Dimensions of machine

(6+1 disposition)

7000mm(W) x 1200mm(D) x 2250mm(H)

Applicable standards


Applicable components

For MOS transistors, diodes, triode, IGBT modules, PIM modules, SCR, etc.