Consult

Dynamic high temperature gate bias burn-in test system(DHTGB2010)

The system performs dynamic high temperature gate bias burn-in test capabilities for the third-generation SiC MOS transistor, and each test area can independently burn up to 12 work stations. independently 12 configurable pulses, and the leakage current of the test gate does not interfere with each other. The device is available at RT ~ 200°C. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal test of other devices.

Function

High-speed dv/dt>1V/ns
nA leakage current test
Threshold value voltage test
Customized burn-in test boards are available for different device packaging, power requirements, etc.
Full experimenter human safety considerations are set

Product Features

Test temperature	RT~200°C (thermal plate)
Burn-in test zone	8 (scalable)
Stations per zone	12 (typical)
Test method	VDS =0V VGS, off=VGS, min, recom and VGS, on=VGS, max
VGS voltage control detection	Test control range: ±30V Detection deviation: ±(1%+2LSB) Voltage resolution: 0.01V
Pulse control	1.Pulse frequency (square wave): 0kHz~500kHz;Accuracy: 2%±2LSB (The maximum frequency depends on the voltage, DUT capacitance) 2. Square wave duty cycle 20%~80%: Accuracy:±2% 3. During the dynamic DGS test, the slope of the grid pole voltage can reach dv/dt>1V/ns (Ciss＜5nF) 4. Voltage overshoot<10% (test voltage amplitude is greater than 25V)
Alarm voltage VGSTH	1. VGS voltage test & control range: 1~10V (100nA~50mA constant current source) 2. Resolution: 0.01V, Accuracy: 1%±0.01V
IGS leakage current detection	Detection range: 1nA~99.9uA Option1: 1nA~99nA resolution 1nA leakage current detection deviation: 1%±2LSB Option2: 100nA to 999nA resolution 10nA Leakage current detection deviation: 1%±2LSB Option3: 1uA~99.9uA resolution 100nA Leakage current detection deviation: 1%±2LSB
Machine power supply	Three-phase AC380±38V
Total weight	700Kg (typical)
Dimensions of machine	800mm (W) x1400mm (D) x1950mm (H)

Applicable standards

AEC-Q101 AQG324 JESD22-A108 JEDEC JEP183A

Applicable components

For SiC, GaN, IGBT module, MOS transistor