Consult

Dynamic high temperaturegate bias burn-in test system(DHTGB2010)

The system performs dynamic high temperature gate bias burn-in test capabilities for the third-generation SiC MOS transistor, and each test area can independently burn up to 12 workstations. independently 12 configurable pulses, and the leakage current of the test gate does notinterfere with each other. The device is available at room temperature+10°C ~ 200°C. It has thefunction of short-circuit disengagement test of test device, which can automatically detach thefaulty device from the burn-in test without affecting the normal test of other devices.

Function

High-speed dv/dt>1V/ns
nA leakage current test
Threshold value voltage test
Customized burn-in test boards are available for different device packaging,power requirements, etc
Full experimenter human safety considerations are set

Product Features

Test temperature	RT +10°C~200°C (thermal plate)
Burn-in test zone	8 (scalable)
Stations per zone	12 (typical)
Test method	VDs =0Va VGS, off=VGS, min, recom and VGS, on=VGS, max
VGS voltage control detection	Test control range: ±35V Detection deviation: ±(1%+2LSB) Voltage resolution: 0.01V
Pulse control	1.Pulse frequency (square wave): 15kHz~500kHz; Accuracy: 2%±2LSB 2.Square wave duty cycle 5%~95%: Accuracy:±2% 3.During the dynamic DGS test, the slope of the grid pole voltage can reach dv/dt>1V/ns (Ciss＜5nF) 4.Voltage overshoot<10% (test voltage amplitude is greater than 25V)
Alarm voltage VGSTH	1. VGS voltage test & control range: 1~10V 2. Resolution is 0.01V, Accuracy: 1%±0.01V
IGS leakage current detection	Option1: 1nA~99nA resolution 1nA leakage current detection deviation: 1%±2LSB Option2: 100nA to 999nA resolution 10nA Leakage current detection deviation: 1%±2LSB Option3: 1uA~99.9uA resolution 100nA Leakage current detection deviation: 1%±2LSB
Machine power supply	Three-phase AC380±38V
Total weight	700KG (typical)
Dimensions of machine	800mm (W) x1400mm (D) x1950mm (H)

Applicable standards

AEC-Q101 AEC-Q102 AQG324 JESD22-A101

Applicable components

For semiconductor discrete devices (SiC MOS transistor, monotubes, and modules) can be performed High temperature dynamic gate bias test.