Consult

High temperature anti bias burn-in system(HTRB3100)

The system can perform high-temperature reverse bias burn-in testing at room temperature +10℃~+200℃, and monitor the leakage of the tested device in real-time during the burn-in process Current state, voltage state of the tested device, and record burn-in test data as needed, and export test reports.

Function

Using a hot platform heating method to heat the device
Each device can realize an independent heating platform and independent temperature control
Good heat transfer characteristics, aiming at the high temperature and high leakage characteristics of IGBT modules/discrete devices, it can achieve stable HTRB test at 175Tj
The independent protection function can be customized to realize the single-station overrun cut-off
Full experimenter human safety considerations are set

Product Features

Test thermal platform	32~48
Test temperature	RT +10℃~+200℃
Burn-in test zone	8
Voltage detection range	-2000V~+2000V
Voltage detection accuracy	±(1%+2LSB)
Current detection range	10nA~50mA
Current detection accuracy	±(1%+10nA)
Machine power supply	Three-phase AC380V±38V
Maximum power	24KW (typical)
Total weight	1600Kg (typical)
Dimensions of machine	Left chamber:1500mm(W)x1400mm(D)x1980mm(H) Right chamber:1500mm(W)x1400mm(D)x1980mm(H) Control cabinets:600mm(W)x1400mm(D)x1980mm(H)

Applicable standards

MIL-STD-750D AQG324

Applicable components

For MOS transistor, diode, triode, IGBT module, PIM module, SCR, etc.