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Dynamic high temperature reverse bias burn-in test system(DHTRB2000)

The system performs dynamic high temperature reverse bias burn-in test for SiC MOS transistor with reference to AQG324 test method. Up to 12 stations can be tested in each test area, with independent pulse source configurations. RT~200°C test temperature is available for the device. It has the function of short-circuit disengagement test of test device, which can auto-matically etach the faulty device from the burn-in test without affecting the normal test of other devices.

Function

dv/dt>50V/ns (Coss<300pF)
2us overcurrent protection
It can be heated independently at room temperature RT~200°C, and is compatible with static HTRB test
Full experimenter human safety considerations are set

Product Features

Test temperature	RT~200℃(thermal plate)
Burn-in test zone	8(scalable)
Stations per zone	12 (typical)
Test Method	Active: VGS off = VGS min and VGS on = VGS maxPassive: VGS = VGS min recom
Voltage range	50~1200V
Voltage accuracy	Detection deviation: ±(2%+1V)
Pulse control	1. Pulse frequency (square wave): 0kHz~100kHz; Accuracy: 2%±2LSB(The maximum frequency depends on the voltage, DUT capacitance) 2. Square wave duty cycle 20%~80%; Accuracy: ±2% 3. Voltage rise rate (dv/dt) ≥ 50V/ns (Coss < 300pF) 4. Voltage overshoot < 15% (Vpp > 960V)
VGS voltage test & control range	-0.7V~-20V/0V
Leakage current detection	Detection range: 0.1uA~20mA. Accuracy: Option1: 0.1uA~0.999uA resolution 0.01uAaccuracy: 1%±0.02uA Option2: 1.00uA~99.9uA resolution 0.1uA accuracy: 1%±0.2uA Option3: 100uA~999uA resolution 1uA accuracy: 1%±2uA Option4: 1.0mA~20.00mA resolution 0.1mA accuracy: 1%±0.2mA
Machine power supply	Three-phase AC380±38V
Total weight	700Kg (typical)
Dimensions of machine	800mm(W)×1400mm(D)×1950mm(H)

Applicable standards

AEC-Q101 AQG324 JESD22-A108 JEDEC JEP183A

Applicable components

For SiC, GaN, IGBT module, MOS transistor