Consult

Dynamic high temperature reverse bias burn-in test system(DHTRB2000)

The system performs dynamic high temperature reverse bias burn-in test for SiC MOS transistor with reference to AQG324 test method. Up to 12 stations can be tested in each test area,with independent pulse source configurations. RT +10°C~175°C test temperature is availablefor the device. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal testof other devices.

Function

nA level leakage current test
Customized burn-in test boards are available for different component packaging, power requirements, etc
Full experimenter human safety considerations are set

Product Features

Test temperature	RT +10℃~175℃ (thermal plate)
Burn-in test zone	8 (scalable)
Stations per zone	12 (typical)
Test Method	Active: Vgs = Vgs offPassive: Vgs, off = VGS， min and VGS, on = VGS, max
Voltage range	50V~1500V
Voltage accuracy	Detection deviation: ±(1%+2LSB)
Pulse control	1. Pulse frequency (square wave): 5kHz~200kHz; Accuracy: 2%±2LSB 2.Square wave duty cycle 20%~80%; Accuracy: ±2% 3.Voltage rise rate (Dv/Dt) ≥50V/ns 4.Voltage overshoot<15%
VGS voltage test & control range	-0.7V~ -22V/0V
Leakage current detection	Detection range:100nA-30mA Accuracy: Option1: 0.1uA~1mA resolution 0.1uA Leakage current test deviation: 1%±2LSB Option2: 1mA~30mA resolution 1uA Leakage current test deviation: 1%±2LSB
Machine power supply	Three-phase AC380±38V
Total weight	700KG(typical)
Dimensions of machine	800mm(W) x 1400mm(D) x 1950mm(H)

Applicable standards

AEC-Q102 AOG324

Applicable components

For diode, triode, MOS transistor, Darlington transistor SiC, GaN, SCR,etc.