HTRB burn-in test system(HTRB2003)

The system can perform the high temperature reverse bias burn-in test at room temperature +10 ℃~200 ℃. During the burn-in process, it can monitor the leakage current status and voltage status of the tested component in real time, (record and export the burn-in test data as required).

Function

NA level leakage current detection accuracy
30s full station data refresh of the machine
Unique high-voltage suppression circuit, instantaneous of components, without affecting burn-in process of other stations
Customized independent control function of burn-in voltage of the work station to eliminate the burn-in overrun of a single station
Adequate human safety considerations for experimenters

Product Features

Test temperature zone	1
Test temperature	RT+10~200℃
Test zone	16(16/32/40/48 zone optional)
Stations per zone	80 (typical)
Burn-in voltage	0~±2000V
Voltage detection accuracy	±(1%+2LSB)
Current detection	10nA~50mA
Current detection accuracy	±(1%+10nA)
Machine power supply	Three-phase AC380±38V
Maximum power	8KW (typical)
Total weight	680KG (typical)
Dimensions of machine	1400mm(W)×1400mm(D×2000mm(H)

Applicable standards

AQG324

Applicable components

For MOS FET, diode, triode, IGBT module, PIM module, thyristor, etc