High temperature gate-bias burn-in test system(HTGB2010)
The system can perform the high temperature gate bias burn-in test at room temperature +10℃~200℃. During theaging process, it canmonitor the leakage current status and voltage status of the tested component in real time, record the Burn-in tese alata as required, and export the tese report.
Function
- nA level for leakage current defection accuracy
- 30s full station data refresh of the machine
- Customizable indepondent control function of burn-in voltage of work station to realize single work station burn-in over limit rejection
- Adequate human safety considerations for operators
Product Features
Test temperature zone | 1 |
Test temperature | RT +10~200℃ |
Test zone | 16(16/32/40/48 optional) |
Stations per zone | 80(typical) |
Bum-in voltage range | 0~±100V |
Voltage delection accuracy | ±(1%+2LSB) |
Current detection range | 1nA~1mA |
Current detection accuracy | ±(1%+1nA) |
Machine power supply | Three-phase AC380±38V |
Maximum power | 8KW(typical) |
Total weight | 680KG(typical) |
Dimensions of machine | 1450mm(W)×1450mm(D)×2000mm(H) |
Applicable standards
JESD22-A101 AQG324 GJB128MIL-STD-750D
Applicable components
For MOS, Diode, triode, IGBT Modules, PIM Modules, thyristor, etc.