The system performs dynamic high temperature gate bias burn-in test capabilities for the third-generation SiC MOS transistor, and each test area can independently burn up to 12 workstations. independently 12 configurable pulses, and the leakage current of the test gate does notinterfere with each other. The device is available at room temperature+10°C ~ 200°C. It has thefunction of short-circuit disengagement test of test device, which can automatically detach thefaulty device from the burn-in test without affecting the normal test of other devices.

The system performs dynamic high temperature reverse bias burn-in test for SiC MOS transistor with reference to AQG324 test method. Up to 12 stations can be tested in each test area,with independent pulse source configurations. RT +10°C~175°C test temperature is availablefor the device. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal testof other devices.

The system performs dynamic high temperature and humidity reverse bias burn-in test for SiC MOSFET with reference to AQG324 for the test method. Up to 8 stations can be tested ineach test area, with independent pulse source configurations. A standard 85°C/85%RH test environment is available for the device. It has the function of short-circuit disengage menttest of test device, which can automatically detach the faulty device from the burn-in test circuit without affecting the normal test of other devices.