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High-Temperature Gate Bias
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HTGB2010

High temperature gate-bias burn-in test system
The system can perform the high temperature gate bias burn-in test at room temperature +10℃~200℃. During theaging process, it canmonitor the leakage current status and voltage status of the tested component in real time, record the Burn-in tese alata as required, and export the tese report.

HTGB2000A

High temperature gate-bias burn-in test system
The system can perform the high temperature gate bias burn-in test at room temperature +10℃~200℃. During theaging process, it canmonitor the leakage current status and voltage status of the tested component in real time, record the Burn-in tese alata as required, and export the tese report.

HTGB2011

High temperature gate-bias burn-in test system
The system can perform the high temperature gate bias burn-in test at room temperature +10℃~200℃. During theaging process, it canmonitor the leakage current status and voltage status of the tested component in real time, record the Burn-in tese alata as required, and export the tese report.

HTGB2000

High temperature gate-bias burn-in test system
The system can perform the high temperature gate bias burn-in test at room temperature +10℃~200℃. During theaging process, it canmonitor the leakage current status and voltage status of the tested component in real time, record the Burn-in tese alata as required, and export the tese report.