Consult

Dynamic power components burn-in test system(DHTOL2000)

The system can conduct dynamic burn-in and testing for MOSFET devices and the third generation SiC and GaN devices. During the burn-in process, it can monitor the peak current, working voltage and on resistance of the tested devices in real time, (record and export the burn-in test data as required).

Function

Aging of high-frequency dynamic burn-in voltage and current
60s full station data refresh of the whole machine
Unique protection circuit, unit device breakdown will not affect burn-in process of other stations
The independent control function of burn-in voltage in the location can be customized to eliminate burn-in overruns
in a single station

Product Features

Test temperature zone	1
Test temperature	RT
Test zone	32zone(6/32 zoneoptional)
Stations per zone	20(typical)
Burn-in voltage	0~650V, accuracy:±(2%+0.1V)
Current detection	0~1A, accuracy:±(2%+0.05A)
Pulse frequency	50KHz~200kHz,accuracy:1%±2LSB
Duty cycle	30%~70%,accuracy:2%
On-resistance Rds(on)	30mR~5R, accuracy:10%
Machine power supply	Three-phase AC380±38V
Maximum power	25KW(typical)
Total weight	1100KG(typical)
Dimensions of machine	2075mm(W)×1350mm(D)×2020mm(H)

Applicable standards

GJB128 MIL-STD-750D AEC-Q101 AQG324 JESD22

Applicable components

For various large, medium and small power MOSFET components and third-generation SiC and GaN components