Consult

High temperature bias burn-in test system(HTXB2000)

The system can perform high-temperature reverse bias and gate bias burn-in testing at room temperature+10℃~+200℃, and monitor the leakage current state and voltage state of the tested device in real-time during the burn-in process. Current state, voltage state of the tested device, and record burn-in test data as needed, and export test reports.

Function

nA level leakage current detection accuracy
30S full station data refresh of the entire machine
Unique high-voltage suppression circuit, instantaneous breakdown of the device does not affect the burn-in process of other workstations
Customizable station burn-in voltage independent control function, achieving single station burn-in exceeding limit elimination
Customizable positive and negative power supplies to achieve simultaneous application of bias voltage to the upper and lower bridges of the module
The device can automatically switch between HTRB and HTGB burn-in modes, achieving one-time furnace entry and automatic completion of RB/GB burn-in
Full experimenter human safety considerations are set

Product Features

Test temperature zone	1
Test temperature	RT+10℃~+200℃
Bumn-in test zone	16(16/32/40/48 zone optional)
Stations per zone	40(typical)
Voltage detection accuracy	±(1%+2LS)
Current detection range	10nA~50mA
Current detection accuracy	±(1%+10nA)
Machine power supply	Three-phase AC380V±38V
Maximum power	8KW (typical)
Total weight	680Kg (typical)
Dimensions of machine	1400mm(w)x1400mm(D)x2000mm(H)

Applicable standards

AEC-Q102 AQG324 JESD22-A101

Applicable components

For MOS transistor, diode, triode, IGBT module, PIM module, SiC, GaN, SCR, etc.