High temperature reverse bias reliability test system(HTRB2000)

The system can perform the high temperature reverse bias reliability test at room temperature +10°C~+200°C. During the burn-in process, it can monitor the leakage current state and voltage state of the tested component in real time, record and export the burn-in test data as required.

Function

nA level leakage current detection accuracy
30s full station data refresh of the machine
Unique high-voltage suppression circuit, instantaneous breakdown of components, without affecting burn-in process of other stations
Customized independent control function of burn-in voltage of the work station to eliminate the burn-in overrun of a single station
Customizable positive and negative power supplies to achieve simultaneous application of bias voltage to the upper and lower bridges of the module
Full experimenter human safety considerations are set

Product Features

Test temperature zone	1
Test temperature	RT +10°C~+200°C
Test zone	16 (16/32/40/48/64/80 zone optional)
Stations per zone	80 (typical)
Burn-in voltage range	Module: -2000V~2000V (Customizable up to ±20000V) Discrete Device: 0V~2000V (Customizable up to 20000V)
Voltage detection accuracy	±(1%+2LSB)
Current detection range	10nA~50mA
Current detection accuracy	±(1%+10nA)
Machine power supply	Three-phase AC380V±38V
Maximum power	8KW (typical)
Total weight	680Kg (typical)
Dimensions of machine	1450mm(W)×1450mm(D)×2000mm(H)

Applicable standards

AQG 324、AEC Q101、JESD 22-A108

Applicable components

SiC MOSFET, diode, triode, IGBT module, PIM module, GaN transistor, SCR, etc.