High temperature gate bias reliability test system(HTGB2000)

The system can perform high temperature gate bias reliability tests at room temperature +10 °C~+200 °C. During the burn-in process, the leakage current state and voltage state of the tested device are monitored in real-time, and burn-in test data is recorded as needed, and test reports are exported.

Function

nA level leakage current detection accuracy
Full station data refresh for 30 seconds of the entire machine
Customizable station burn-in voltage independent control function, achieving single station burn-in exceeding limit elimination
Full experimenter human safety considerations are set

Product Features

Test temperature zone	1
Test temperature	RT +10℃~+200℃
Test zone	16 (16/32/40/48/64/80 zone optional)
Stations per zone	80 (typical)
Burn-in voltage range	0~±100V
Voltage detection accuracy	±(1%+2LSB)
Current detection range	1nA~100μA
Current detection accuracy	±(1%+0.2nA)
Machine power supply	Three-phase AC380V±38V
Maximum power	8KW (typical)
Total weight	680Kg (typical)
Dimensions of machine	1450mm(W)x1450mm(D)x2000mm(H)

Applicable standards

AEC Q101、AQG 324、JESD 22-A108

Applicable components

For SiC MOSFET, diode, triode, IGBT module, PIM module, SCR, etc.