Dynamic high temperature high humidity reverse bias reliability test system(DH3TRB2000)

The system performs dynamic high temperature and humidity reverse bias reliability test for SiC MOSFET with reference to AQG324 for the test method. Up to 12 stations can be tested in each test area, with independent pulse source configurations. A standard 85°C/85%RH test environment is available for the device. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test circuit without affecting the normal test of other devices.

Function

nA-level leakage current detection accuracy
dv/dt > 30V/ns (Coss < 300pF)
The whole machine is refreshed in 30s for full-station data
Unique high-voltage suppression circuit, the instantaneous breakdown of the device does not affect the burn-in process of other stations
The independent control function of the burn-in voltage of the station can be customized to realize the over-limit rejection of the burn-in of a single station
Full experimenter human safety considerations are set

Product Features

Test temperature	RT +10°C~+150°C
Test humidity	10%RH~98%RH
Test Method	VDS > 0.5VDS,max, Active: VGS, off = VGS, off, recom and VGS, on = VGS, on, recom Passive: VGS = VGS, off, recom
Test zone	14 (scalable)
Stations per zone	6 (typical)
Voltage detection range	0V~2000V (Customizable up to 10000V)
Voltage detection accuracy	Detection deviation; ±(1%+1V)
Pulse control	1. Pulse frequency (square wave): 0kHz~50kHz; Accuracy: 1%±2LSB 2. Square wave duty cycle 20%~80% Accuracy: ±1% 3. Voltage rise rate (dv/dt) ≥30V/ns (Coss < 300pF) 4. Voltage overshoot <15%VDS 5. DVDT Software Programmable
VGS voltage test & control range	Passive: -20V~0V Active: -30V~30V
Leakage current detection	Covers: 1nA~100mA, 1nA~1000nA, Accuracy better than 0.1%±2nA 1μA~1000μA, Accuracy better than 0.1%±50nA 1mA~100mA, Accuracy better than 0.1%±10μA Auto-ranging for leakage current measurement.
Machine power supply	Three-phase AC380V±38V
Total weight	700Kg (typical)
Dimensions of machine	800mm(W)x1400mm(D)x1950mm(H)

Applicable standards

AEC Q101、AQG 324、JEDEC JEP183A、JESD 22-A108

Applicable components

For SiC MOSFET, GaN transistor, IGBT module