High-temperature forward bias reliability test system(HTFB2000)

The system performs high temperature forward bias reliability test for SiC MOSFET with reference to ACE-Q101E, AQG324 test method. Up to 5 stations can be tested in each test area, with independent pulse source configurations. RT~200°C test temperature is available for the device. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal test of other devices.

Function

Applied current range: 1000A to 2000A
Pulse rise time: less than 20μs
Full experimenter human safety considerations are set

Product Features

Test temperature	RT~200°C (thermal plate)
Test zone	4 (scalable)
Stations per zone	5 (typical)
Test Method	Pulse Current: Minimum Pulse Count: 50pulses~100pulses; Single Current Duration: 50μs~10ms Pulse Frequency: 0.01Hz~0.2Hz; Pulse Duty cycle: <0.5%; Pulse Rise Time: <20μs
Gate Threshold Voltage	Voltage Range: 0V~200V; Current Measurement Range: ±1A Measurement Accuracy: (0.015%+1mV)@20V; Measurement Resolution: 10μV
On-resistance / Forward Voltage Test	Test Current Pulse Width: 100μs~200μs; Test Pulse Current Rise Time: 15μs Output Current of Test Current Source: 10mA~200A; Output Voltage of Test Current Source: 10V Measurement Accuracy: 0V~10V Range, Accuracy: ±0.2%±1mV
System Control Solution	Cooling Mode: air cooling; Case Temperature Sampling Accuracy: ±1°C Drive Voltage: -10V~+20V; Protection Mode: Over Current/Over Voltage/Over Temperature
Drain Leakage Current	Measurement Range: 100V~2000V; Current Detection Range: 0mA~1mA Current Detection Accuracy: (1%±10nA)@10μA; (2%±100pA)@10nA Current Detection Resolution: 40pA@10μA; 40fA@10nA
Gate Leakage Current	Measured Voltage Range: -40V~40V; Current Detection Range: 0mA~1mA Current Detection Accuracy: (0.025%+300pA)@1μA; (0.025%+700pA)@10μA Current Detection Resolution: 1pA@1μA; 10pA@10μA
Machine power supply	Three-phase AC380V±38V
Total weight	700Kg (typical)
Dimensions of machine	800mm(W) x 1400mm(D) x 1950mm(H) (typical)

Applicable standards

AEC Q101、AQG 324

Applicable components

For SiC MOSFET