High temperature bias reliability test system(HTXB4100)

The system can perform high temperature reverse bias and gate bias reliability testing at room temperature+10℃~+200℃, and monitor the leakage current state and voltage state of the tested device in real-time during the burn-in process. Current state, voltage state of the tested device, and record burn-in test data as needed, and export test reports.

Function

The device is heated using a thermal platform heating method
Each device can realize an independent heating platform and independent temperature control
Good heat transfer characteristics, aiming at the high temperature and high leakage current characteristics of IGBT modules/discrete devices, it can achieve stable HTRB test at 175Tj
The independent protection function can be customized to realize the single-station overrun cut-off
The automatic loading platform, program gating, can be fully automated with the ground rail
The test cabinet can be added or reduced according to the demand
Full experimenter human safety considerations are set

Product Features

Test thermal platform	96
Test temperature	RT +10℃~+200℃
Burn-in test zone	2~24
Voltage detection range	HTRB: -2000V~+2000V HTGB: 0V~±100V (Customizable up to ±20000V)
Voltage detection accuracy	±(1%+2LSB)
Current detection range (Igs)	1nA~100uA
Current detection accuracy (Igs)	±(1%+1nA)
Current detection range (Ids)	10nA~30mA
Current detection accuracy (Ids)	±(1%+10nA)
Machine power supply	Three-phase AC380V±38V
Maximum power	32KW (typical)
Total weight	6000Kg (typical)
Dimensions of machine (6+1 disposition)	7000mm(W)x1200mm(D)x2250mm(H)

Applicable standards

AQG 324、AEC Q101、JESD 22-A108

Applicable components

For SiC MOS transistor, diode, triode, IGBT module, PIM module, SCR, etc.