
The system is suitable for power cycling test of various sizes of IGBT modules and uses the advanced JEDEC static test method (JESD51-1) to generate temperature changes by varying the input power of the electronic component. During the change, through transient temperature response curve of the tested chip and data processing of the test waveform to obtain the full thermal characteristics of the electronic component.
Test temperature zone | 3 |
Test temperature | Water cooling plate: +10°C~+80°C |
Test zone | 3 |
Constant temperature | Water cooling system: ±0.5°C |
Junction temperature | ±2°C |
Cold plate and shell | ±2°C |
Heating current | 600A/zone (supporting three zones in parallel 1800C) |
Test current | ±(10mA~1000mA) |
Test current accuracy | ±(0.3%+2mA), resolution 0.1mA |
Machine power supply | Three-phase AC380V±38V |
Maximum power | 30KW (typical) |
Total weight | 500Kg (typical) |
Dimension of machine | 1900mm(W)×900mm(D)×1300mm(H) |
JESD 51、AQG 324
For various sizes of IGBT module and SiC MOSFET.