Product Navigation
You're here： Home Products Photovoltaic & Energy Storage Dynamic Reliability Test System Dynamic high temperature gate bias reliability test system (DHTGB2000)
Consult

Dynamic high temperature gate bias reliability test system(DHTGB2000)

The system performs dynamic high temperature gate bias burn-in test capabilities for the third-generation SiC MOS transistor, and each test area can independently burn up to 12 work stations. Independently 12 configurable pulses, and the leakage current of the test gate does not interfere with each other. The device is available at RT~200°C. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal test of other devices.

Function

  • High-speed dv/dt>1V/ns
  • nA leakage current test
  • Threshold value voltage test
  • Customized burn-in test boards are available for different device packaging, power requirements, etc.
  • Full experimenter human safety considerations are set

Product Features

Test temperature

RT~200°C (thermal plate)

Test zone

8 (Scalable)

Stations per zone

12 (typical)

Test method

VDS =0V, VGS, off = VGS, min, and VGS, on = VGS, max

Test voltage

Test control range: ±50V
Detection deviation: ±(1%+2LSB)
Voltage resolution: 0.01V

Pulse control

1. Pulse frequency (square wave): 0kHz~500kHz; Accuracy: 2%±2LSB (The maximum frequency depends on the voltage, DUT capacitance)
2. Square wave duty cycle 20%~80%: Accuracy: ±1%
3. During the dynamic DGS test, the slope of the grid pole voltage can reach dv/dt>1V/ns (Ciss < 10nF)
4. Voltage overshoot<±0.5V
5. DVDT Software Programmable

Alarm voltage VGSTH

1. VTH voltage test & control range:
0.1V~10V (100uA~50mA Constant Current Source)
2. Resolution: 0.01V, Accuracy: 1%±0.01V

IGS leakage current
detection

Leakage Current Measurement Range: Covers 0.1nA~100mA,
0.1nA~10nA, Accuracy better than 0.1%±0.5nA;
10nA~100nA, Accuracy better than 0.1%±1nA;
100nA~1000nA, Accuracy better than 0.1%±1.5nA;
1uA~10uA, Accuracy better than 0.1%±2nA;
10uA~100uA, Accuracy better than 0.1%±25nA;
100uA~1000uA, Accuracy better than 0.1%±50nA;
1mA~10mA, Accuracy better than 0.1%±500nA;
10mA~100mA, Accuracy better than 0.1%±1uA;
Auto-ranging for leakage current measurement.

Machine power supply

Three-phase AC380V±38V

Total weight

700Kg (typical)

Dimensions of machine

800mm(W)x1400mm(D)x1950mm(H)


Applicable standards

AEC Q101、AQG 324、JEDEC JEP183A、JESD 22-A108

Applicable components

For SiC MOSFET, GaN transistor, IGBT module, MOS transistor