Dynamic high temperature gate bias reliability test system(DHTGB2000)

The system performs dynamic high temperature gate bias burn-in test capabilities for the third-generation SiC MOS transistor, and each test area can independently burn up to 12 work stations. Independently 12 configurable pulses, and the leakage current of the test gate does not interfere with each other. The device is available at RT~200°C. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal test of other devices.

Function

High-speed dv/dt>1V/ns
nA leakage current test
Threshold value voltage test
Customized burn-in test boards are available for different device packaging, power requirements, etc.
Full experimenter human safety considerations are set

Product Features

Test temperature	RT~200°C (thermal plate)
Test zone	8 (Scalable)
Stations per zone	12 (typical)
Test method	VDS =0V, VGS, off = VGS, min, and VGS, on = VGS, max
Test voltage	Test control range: ±50V Detection deviation: ±(1%+2LSB) Voltage resolution: 0.01V
Pulse control	1. Pulse frequency (square wave): 0kHz~500kHz; Accuracy: 2%±2LSB (The maximum frequency depends on the voltage, DUT capacitance) 2. Square wave duty cycle 20%~80%: Accuracy: ±1% 3. During the dynamic DGS test, the slope of the grid pole voltage can reach dv/dt>1V/ns (Ciss < 10nF) 4. Voltage overshoot<±0.5V 5. DVDT Software Programmable
Alarm voltage VGSTH	1. VTH voltage test & control range: 0.1V~10V (100uA~50mA Constant Current Source) 2. Resolution: 0.01V, Accuracy: 1%±0.01V
IGS leakage current detection	Leakage Current Measurement Range: Covers 0.1nA~100mA, 0.1nA~10nA, Accuracy better than 0.1%±0.5nA; 10nA~100nA, Accuracy better than 0.1%±1nA; 100nA~1000nA, Accuracy better than 0.1%±1.5nA; 1uA~10uA, Accuracy better than 0.1%±2nA; 10uA~100uA, Accuracy better than 0.1%±25nA; 100uA~1000uA, Accuracy better than 0.1%±50nA; 1mA~10mA, Accuracy better than 0.1%±500nA; 10mA~100mA, Accuracy better than 0.1%±1uA; Auto-ranging for leakage current measurement.
Machine power supply	Three-phase AC380V±38V
Total weight	700Kg (typical)
Dimensions of machine	800mm(W)x1400mm(D)x1950mm(H)

Applicable standards

AEC Q101、AQG 324、JEDEC JEP183A、JESD 22-A108

Applicable components

For SiC MOSFET, GaN transistor, IGBT module, MOS transistor