Dynamic high temperature reverse bias reliability test system(DHTRB2000)

The system performs dynamic high temperature reverse bias burn-in test for SiC MOS transistor with reference to AQG324 test method. Up to 12 stations can be tested in each test area, with independent pulse source configurations. RT~200°C test temperature is available for the device. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal test of other devices.

Function

dv/dt>50V/ns (Coss<300pF)
2us overcurrent protection
It can be heated independently at room temperature RT~200°C, and is compatible with static HTRB test
Full experimenter human safety considerations are set

Product Features

Test temperature	RT~200°C (thermal plate)
Test zone	8 (scalable)
Stations per zone	12 (typical)
Test Method	VDS > 0.5VDS,max, Active: VGS, off = VGS, off, recom and VGS, on = VGS, on, recom Passive: VGS = VGS, off, recom
Voltage range	0V~2000V (Customizable up to 10000V)
Voltage accuracy	Detection deviation: ±(1%+1V)
Pulse control	1. Pulse frequency (square wave): 0kHz~200kHz; Accuracy: 1%±2LSB (The maximum frequency depends on the voltage, DUT capacitance) 2. Square wave duty cycle 20%~80%: Accuracy: ±1% 3. Voltage rise rate (dv/dt) ≥50V/ns (Coss < 300pF) 4. Voltage overshoot<15%VDS 5. DVDT Software Programmable
VGS voltage range	Active: -20V~0V, Passive: -30V~30V
Leakage current detection	Covers: 1nA~100mA, 1nA~1000nA, Accuracy better than 0.1%±2nA 1uA~1000uA, Accuracy better than 0.1%±50nA 1mA~100mA, Accuracy better than 0.1%±10uA Auto-ranging for leakage current measurement.
Machine power supply	Three-phase AC380V±38V
Total weight	700Kg (typical)
Dimensions of machine	800mm(W)x1400mm(D)x1950mm(H)

Applicable standards

AEC Q101、AQG 324、JEDEC JEP183A、JESD 22-A108

Applicable components

For SiC MOSFET, GaN transistor, IGBT module